Bandgap tunability in Zn(Sn,Ge)N(2) semiconductor alloys.
نویسندگان
چکیده
ZnSn1-x Gex N2 direct bandgap semiconductor alloys, with a crystal structure and electronic structure similar to InGaN, are earth-abundant alternatives for efficient, high-quality optoelectronic devices and solar-energy conversion. The bandgap is tunable almost monotonically from 2 eV (ZnSnN2 ) to 3.1 eV (ZnGeN2 ) by control of the Sn/Ge ratio.
منابع مشابه
A SYSTEMATIC STUDY OF THE OPTICAL AND ELECTRICAL PROPERTIES OF Ge1-ySny AND Ge1-x-ySixSny SEMICONDUCTOR ALLOYS DISSERTATION
Silicon is very well known for its electronic device applications, but Si-based microelectronics will eventually reach their ultimate physical size and technological limits. In order to overcome these limitations and to broaden the role of Si technology into the realm of optical signal generation and processing, an intensive research effort has been made. As a result, a significant breakthrough...
متن کاملNon-equilibrium induction of tin in germanium: towards direct bandgap Ge1−xSnx nanowires
The development of non-equilibrium group IV nanoscale alloys is critical to achieving new functionalities, such as the formation of a direct bandgap in a conventional indirect bandgap elemental semiconductor. Here, we describe the fabrication of uniform diameter, direct bandgap Ge(1-x)Sn(x) alloy nanowires, with a Sn incorporation up to 9.2 at.%, far in excess of the equilibrium solubility of S...
متن کاملDirect energy gap group IV semiconductor alloys and quantum dot arrays in SnxGe1−x/Ge and SnxSi1−x/Si alloy systems
The narrow gap semiconductor alloys SnxGe1−x and SnxSi1−x offer the possibility for engineering tunable direct energy gap Group IV semiconductor materials. For pseudomorphic SnxGe1−x alloys grown on Ge (001) by molecular beam epitaxy, an indirect-to-direct bandgap transition with increasing Sn composition is observed, and the effects of misfit on the bandgap analyzed in terms of a deformation p...
متن کاملDirect Energy Bandgap Group IV Alloys and Nanostructures
Novel group IV nanostructures were fabricated and the optical properties of such nanostructures were investigated for monolithic integration of optically active materials with silicon. The SnxGe1-x alloy system was studied due to the previous demonstration of an indirect to direct energy bandgap transition for strain-relieved SnxGe1-x films on Si(001). In addition, quantum confined structures o...
متن کاملAtomic structure of pressure-induced amorphous semiconductors
The paper will briefly review and discuss results of our investigations on the atomic correlations in amorphous Zn-Sb, GaSb, GaSb-Ge and Al-Ge alloys. These semiconductor alloys were prepared by solid state reactions in the course of heating the quenched highpressure phases. Structure of the final products was studied by neutron diffraction for the Al-Ge, GaSb and GaSb-Ge alloys and by transmis...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Advanced materials
دوره 26 8 شماره
صفحات -
تاریخ انتشار 2014